IRG4BC20UD-SPBF transistor equivalent, insulated gate bipolar transistor.
* UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
* Generation 4 IGBT design provides tighter parameter d.
ENT
Ipk Ic
∫ t2
Eon = Vce ie dt t1
t2
Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr
8
Ic.
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